Semiconductor laser
文献类型：专利
| 作者 | KOJIMA KEISUKE; NODA SUSUMU; HISAMA KAZUO |
| 发表日期 | 1988-04-22 |
| 专利号 | JP1988092076A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce the scattering loss at a junction part between a Bragg reflection region and an active egion, by providing a first conductivity type light confinement layer, an quantum well layer, a second conductivity type light confinement layer, a diffraction grating and a second electrode, making one side part a Bragg reflection region, and making the other side part an active region. CONSTITUTION:A substrate 2 is provided with a first elecirode The first electrode 1 is provided with a first conductivity type light confinement layer 3. The first conductivity type light confinement layer is provided with a quantum well layer 4. The quantum well layer 4 is provided with a second conduction type light confinement layer 5. On one side of the opposite face of the second conduction type light confinement layer to the quantum well layer 4, a diffraction grating 8 is arranged, and a second electrode 7 is arranged on the other side. A Bragg reflection region 10 is constituted on one side, and an active region 9 is constituted on the other side. Consequently, the active layer and a light guide layer are constituted of the identical quantum well structure, and the Bragg reflection region 10 and the active layer 9 are formed by a continuous layer. Therefore, at the optical wavelength wherein the active layer has the maximum gain, the absorption loss is very small, and the reflection in the Bragg reflection region 10 takes place effectively. |
| 公开日期 | 1988-04-22 |
| 申请日期 | 1986-10-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75907]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KOJIMA KEISUKE,NODA SUSUMU,HISAMA KAZUO. Semiconductor laser. JP1988092076A. 1988-04-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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