Manufacture of semiconductor element
文献类型：专利
| 作者 | HASEGAWA MITSUTOSHI |
| 发表日期 | 1990-08-15 |
| 专利号 | JP1990205319A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor element |
| 英文摘要 | PURPOSE:To obtain a semiconductor element, a process of which is facilitated and which has excellent reproducibility, by forming an insulating film to a base material as a mask material is left as it is not removed and taking off, the insulating film in the top section of a protrusion together with the mask material. CONSTITUTION:Striped photo-masks 17 are shaped to the upper section of a semiconductor laser wafer, sections up to the upper section of approximately 0.5mum+ or -0.2mum of an active layer 14 are etched through the photo-masks 17, and polyimide LB(Langmuir-Blodgett) films 18 are formed in 200Angstrom as the masks 17 are left as they are and an insulating film is shaped. The films 18 of the top sections of ridges are lifted off by an etchant dissolving only the masks 17, and used as current injection regions. Cr-Au ohmic electrodes are formed through a vacuum deposition method as upper electrodes 102, a GaAs substrate 11 is lapped to thickness of 100mum, and an Au-Ge electrode is evaporated as an N-type ohmic electrode 103. Accordingly, a process can be simplified, and a semiconductor element having excellent reproducibility is acquired. |
| 公开日期 | 1990-08-15 |
| 申请日期 | 1989-02-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75925]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | HASEGAWA MITSUTOSHI. Manufacture of semiconductor element. JP1990205319A. 1990-08-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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