半導体レーザ
文献类型：专利
| 作者 | 生和 義人; 青柳 利隆; 門脇 朋子; 村上 隆志; 須崎 渉 |
| 发表日期 | 1995-04-12 |
| 专利号 | JP1995034496B2 |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To prevent a rise in an oscillation threshold value current and a deviation in an oscillation wavelength by forming an active layer by gallium- indium-phosphorus or aluminum-gallium-indium-phosphorous and making the diffusion velocity of an impurity for doping an upper clad layer smaller than that of the impurity for diffusion. CONSTITUTION:A semiconductor lower clad layer 9 composed of n-type (Al0.6Ga0.4)0.5In0.5P, a semiconductor active layer 10 composed of n-type Ga0.5In0.5 P, a semiconductor upper clad layer 11 composed of p-type (Al0.6Ga0.4)0.5In0.5P doped with magnesium Mg having a diffusion velocity smaller than that of Zn as a doping impurity and a contact layer 12 composed of p-type GaAs are sequentially laminated on an n-type GaAs substrate 8. Thus, Mg in the upper clad layer 11 can be controlled in diffusion in an active region 14 in a process for forming a diffusion region 13 and the forbidden band width of the active region 14 can be prevented from being increased by the diffusion of Mg. |
| 公开日期 | 1995-04-12 |
| 申请日期 | 1989-09-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75931]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | 生和 義人,青柳 利隆,門脇 朋子,等. 半導体レーザ. JP1995034496B2. 1995-04-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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