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文献类型：专利
| 作者 | MUSHIGAMI MASAHITO; TANAKA HARUO; ISHIDA JUJI |
| 发表日期 | 1989-08-09 |
| 专利号 | JP1989037869B2 |
| 著作权人 | ROHM KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To obtain the title device of high quality by a method wherein a dummy laser of double hetero junction structure with a composition ratio set almost at the same as that of a layer of double hetero junction structure is formed in the first grown layer os an AlGaAs series semiconductor laser produced bu an MBE device. CONSTITUTION:The dummy later 40 of double hetero junction structure has the composition ratio and the growing temperature set almost at the same as those of the layer 20 of double hetero junction structure, and is equipped with a three- layer structure corresponding to the lower clad layer 21, an active layer 22, and the first upper clad layer 23. A strip groove 40 reaching the first upper clad layer 23 is formed in this first grown layer by selective etching. Further, the second cap layer 70 is formed, and finally electrodes 80 and 81 are formed. Thereby, the dummy layer 4o of double hetero junction structure prevents the evaporation of GaAs of the light absorption layer 30; thus, obtaining the title device of high accuracy is enabled. |
| 公开日期 | 1989-08-09 |
| 申请日期 | 1984-08-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75932]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM KK |
| 推荐引用方式 GB/T 7714 | MUSHIGAMI MASAHITO,TANAKA HARUO,ISHIDA JUJI. -. JP1989037869B2. 1989-08-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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