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文献类型：专利
| 作者 | DOI KONEN; AIKI KUNIO; KAYANE NAOKI; FUNAKOSHI KYOHIKO; NAKAMURA SATOSHI; TAKEDA YUTAKA; ITO RYOICHI |
| 发表日期 | 1987-08-13 |
| 专利号 | JP1987037557B2 |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To make stable the oscillation mode, by forming the convex part at least at one of the second and third semiconductor layers, through the provision of the second and third semiconductor layers having greater width of forbidden band than the first semiconductor layer by clipping it. CONSTITUTION:The grooves in stripe shape are formed on the N type InP substrate 21 with etching, and the Sn doped N type Ca0.03 In0.97 As0.06P0.94 second semiconductor layer 22 3 eV in the width of forbidden band and 10/cm in electron concentration is grown by liquid phase epitaxial on all the surfaces. Next, undoped Ga0.22In0.78As0.47P.0.53 first semiconductor layer 23 0eV in the width of forbiden band and Zn doped P type third semiconductor layer 24 33 eV in the width of forbidden band and 10/cm in positive hole concentration are laminated on it and grown. After that, on the layer 24, the positive electrode 25 of Au-Zn alloy is attached on the layer 24 and the negative electrode 26 of Au-Sn alloy is at the back of the usbstrate 2 Thus, the transversal mode is made stable and the exciting current versus photo output performance is made a straight line. |
| 公开日期 | 1987-08-13 |
| 申请日期 | 1977-09-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75937]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | DOI KONEN,AIKI KUNIO,KAYANE NAOKI,et al. -. JP1987037557B2. 1987-08-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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