Semiconductor laser
文献类型：专利
| 作者 | SHIGERU, MITSUI; RYO, HATTORI; TETSUYA, YAGI |
| 发表日期 | 1990-02-28 |
| 专利号 | GB2222307A |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | A semiconductor laser includes a first cladding layer having a forward mesa with at least one end at least partially spaced from the adjacent facet of the laser. A current blocking layer buries the mesa at its sides and at least partially at the ends of the mesa so that the ends are at least partially spaced from the facets. The current blocking layer reduces current injection and surface recombination at the facets at least partially spaced from the mesa ends, thereby increasing the catastrophic optical damage level of the laser. The mesa is formed without etching or exposing the active layer so that formation of interfaces that refract light or shorten laser life-time are avoided. An increase in COD level of about 20 percent is achieved in the invention. |
| 公开日期 | 1990-02-28 |
| 申请日期 | 1989-07-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75938]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | SHIGERU, MITSUI,RYO, HATTORI,TETSUYA, YAGI. Semiconductor laser. GB2222307A. 1990-02-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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