Semiconductor laser
文献类型：专利
| 作者 | TAKEDA, YUTAKA; NAKAMURA, SATOSHI; CHINONE, NAOKI; NAKASHIMA, HISAO; KURATA, KAZUHIRO |
| 发表日期 | 1979-09-25 |
| 专利号 | CA1063215A |
| 著作权人 | HITACHI, LTD. |
| 国家 | 加拿大 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | SEMICONDUCTOR LASER ABSTRACT OF THE DISCLOSURE The present invention relates to a mesa-stripe geometry semiconductor laser. The laser is comprised of an electrode which is provided on one principal surface of a semiconductor wafer, a P-N junction provided on the other and opposite principal surface of the wafer, an active region which adjoins the P-N junction, and a mesa shaped current-conducting semiconductor region which is formed on a principal surface of the active region in a small sectional area and which contains the active region therein. The laser also is comprised of a mount supporting a second semiconductor region which is formed into a mesa shape by an etching groove formed on at least one side of said current-conducting semiconductor region. The laser is further comprised of a dielectric layer which covers surfaces of the second semiconductor region and the etching groove, an electrode formed on the dielectric layer and on the current-conducting semiconductor region and a heat sink. The mount supporting semiconductor region of the laser is higher than the current-conducting region. |
| 公开日期 | 1979-09-25 |
| 申请日期 | 1977-03-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75942]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | TAKEDA, YUTAKA,NAKAMURA, SATOSHI,CHINONE, NAOKI,et al. Semiconductor laser. CA1063215A. 1979-09-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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