Light-emitting element
文献类型：专利
| 作者 | KONO TOSHIHIRO; HANEDA MAKOTO; TSUJI SHINJI; ONO YUICHI |
| 发表日期 | 1992-03-27 |
| 专利号 | JP1992096381A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Light-emitting element |
| 英文摘要 | PURPOSE:To widen the zone of a reflection spectrum, to match a light-emitting wavelength and a reflected wavelength easily and to manufacture an element readily by continuously laminating a plurality of reflecting layers having different reflected wavelengths. CONSTITUTION:A P-Al0.37Ga0.63As clad layer 2, a P-AlGaAs active layer 3, an N-Al0.37Ga0.63As clad layer 4, a semiconductor multilayer reflecting film 5, in which N-Al0.1Ga0.9As high refractive-index layers and N-Al0.7Ga0.3As low refractive-index layers having different film thickness are laminated alternately, and an N-GaAs cap layer 6 are laminated successively onto an Al1-xGaxAs thick-film substrate l through an organometallic vapor growth method. A light-emitting region in 100mumphi is formed by isolation trenches 7. Eight kinds of reflecting layers having different reflected wavelengths are laminated continuously, the reflected wavelengths of each reflecting layer are determined so that the light-emitting wavelength of 830nm of the active layer is used as the approximately center of each reflected wavelength, and the intervals of wavelengths are brought to 200nm, thus widening the zone of a reflection spectrum. |
| 公开日期 | 1992-03-27 |
| 申请日期 | 1990-08-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75956]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KONO TOSHIHIRO,HANEDA MAKOTO,TSUJI SHINJI,et al. Light-emitting element. JP1992096381A. 1992-03-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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