Semiconductor laser
文献类型：专利
| 作者 | MATSUOKA TAKASHI; SASAKI TORU; ANDOU TAKASHI |
| 发表日期 | 1989-07-05 |
| 专利号 | JP1989169984A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser, a conductive region of which is limited, which has high efficiency and a high output and can be modulated at high speed and yield of which can be realized to a high degree through an easily executable process, by insulating the outside of the conductive region or increasing resistance thereof. CONSTITUTION:A buffer layer 2, an active layer 3, a clad layer 4 and a cap layer 9 are grown continuously onto a substrate The substrate side is polished with feather or cloth down to a thin layer. Electrodes 6, 7 are evaporated. The resistance of regions 11 is increased through the following method. That is, electron rays are applied. Consequently, the conductivity type of the regions 11 is altered. The cap layer 9 is turned into a high resistance layer having a resistivity of 10OMEGAcm or more through the treatment of annealing in a nitrogen atmosphere. The resistance of the layer 9 is stably kept high extending over 400 deg.C or more. Accordingly, a crystal is insulated or resistance thereof is increased by an endogenous defect stable up to approximately 400 deg.C, thus limiting a current injection region. |
| 公开日期 | 1989-07-05 |
| 申请日期 | 1987-12-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75958]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | MATSUOKA TAKASHI,SASAKI TORU,ANDOU TAKASHI. Semiconductor laser. JP1989169984A. 1989-07-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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