Semiconductor light emitting device
文献类型：专利
| 作者 | OGITA SHOICHI; KOTAKI YUJI |
| 发表日期 | 1991-11-21 |
| 专利号 | JP1991261189A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To uniformize carrier distribution in the longitudinal direction of a resonator by a simple single-electrode structure and realize a narrow spectral line width, by making the conductive impurity density of the upper clad layer higher at the end sections of the resonator than at the center section thereof. CONSTITUTION:A clad layer just above an active layer 104 is changed in the axial direction, and the center section where light intensity distribution concentrates makes a high-density clad layer 106, and both end sections of low light intensity distribution make low-density clad layer 105. Namely, the impurity density of the clad layer just above the active layer 104 is changed according to the light intensity distribution in the processing direction of light, and a part where light is strong is made to have a low density and parts where light is weak are made to have a high density. This uniformizes the carrier distribution in the longitudinal direction of a resonator by a simple single- electrode structure, and realizes a narrow spectral line width. |
| 公开日期 | 1991-11-21 |
| 申请日期 | 1990-03-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75960]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | OGITA SHOICHI,KOTAKI YUJI. Semiconductor light emitting device. JP1991261189A. 1991-11-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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