半導体レ-ザ
文献类型：专利
| 作者 | 清水 明; 原 利民 |
| 发表日期 | 1995-12-06 |
| 专利号 | JP1995114302B2 |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ |
| 英文摘要 | PURPOSE:To manufacture a semiconductor laser with low threshold current while assuring stable basic lateral mode oscilation by a method wherein a current injected region is formed in narrower width than that of a light confinement region. CONSTITUTION:A groove in width W is cut in a ridge part to supply S' part only with current. For example, assuming an active layer, a clad layer and an insulating film to be respectively made of GaAs, AlxGa1-xAs and SiO2 with specified dimensions of x=0.3, s=5 mum, S'=2mum, W=0.5 mum, H=h'=2 mum, d=0.1 mum, higher lateral mode of light can be guided but the part with high intensity of basic lateral mode of light is mostly contained in the width of s', on the other hand, the primary lateral mode of light is expanded up to the width s diminishing the intensity at the part of width s'. In such a constitution, the current is constricted at the part of width s due to the groove 9 so that the gain of primary lateral mode may be made notably lower than that of basic lateral mode enablin the basic lateral mode only to be oscillated stably. |
| 公开日期 | 1995-12-06 |
| 申请日期 | 1986-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75966]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | 清水 明,原 利民. 半導体レ-ザ. JP1995114302B2. 1995-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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