中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser device

文献类型:专利

作者KAJIMURA TAKASHI; ONO YUUICHI; KAYANE NAOKI; NAKATSUKA SHINICHI; UOMI KAZUHISA; OOTOSHI SOU
发表日期1985-07-15
专利号JP1985132381A
著作权人HITACHI SEISAKUSHO KK
国家日本
文献子类发明申请
其他题名Semiconductor laser device
英文摘要PURPOSE:To obtain a high output laser having an end transparent structure which operates in a low threshold value and has high reliability by limiting a current implanting region to a region except the vicinity of the end of the laser. CONSTITUTION:An N type GaAlAs clad layer 2, a quantum well type active layer 8 formed repeatedly with a GaAs layer 5 and a GaAlAs layer 4, the clad layer 4 and the layer 5 are sequentially formed on an N type GaAs substrate Then, a deep mesa which reaches the substrate is formed, a P type GaAlAs layer 9, an N type GaAlAs layer 10 and an N type GaAs layer 11 are formed in the mesa side to bury the mesa region. The laser is bonded to a stem, and the oscillating characteristic in a room temperature continuous operation is measured. The element operates a low threshold current in a certain oscillating wavelength to oscillate in a stable lateral basic mode. When it is operated with constant light output at 70 deg.C of environmental temperature, high reliability is exhibited.
公开日期1985-07-15
申请日期1983-12-21
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/75972]  
专题半导体激光器专利数据库
作者单位HITACHI SEISAKUSHO KK
推荐引用方式
GB/T 7714
KAJIMURA TAKASHI,ONO YUUICHI,KAYANE NAOKI,et al. Semiconductor laser device. JP1985132381A. 1985-07-15.

入库方式: OAI收割

来源:西安光学精密机械研究所

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