Semiconductor laser device
文献类型：专利
| 作者 | KAJIMURA TAKASHI; ONO YUUICHI; KAYANE NAOKI; NAKATSUKA SHINICHI; UOMI KAZUHISA; OOTOSHI SOU |
| 发表日期 | 1985-07-15 |
| 专利号 | JP1985132381A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a high output laser having an end transparent structure which operates in a low threshold value and has high reliability by limiting a current implanting region to a region except the vicinity of the end of the laser. CONSTITUTION:An N type GaAlAs clad layer 2, a quantum well type active layer 8 formed repeatedly with a GaAs layer 5 and a GaAlAs layer 4, the clad layer 4 and the layer 5 are sequentially formed on an N type GaAs substrate Then, a deep mesa which reaches the substrate is formed, a P type GaAlAs layer 9, an N type GaAlAs layer 10 and an N type GaAs layer 11 are formed in the mesa side to bury the mesa region. The laser is bonded to a stem, and the oscillating characteristic in a room temperature continuous operation is measured. The element operates a low threshold current in a certain oscillating wavelength to oscillate in a stable lateral basic mode. When it is operated with constant light output at 70 deg.C of environmental temperature, high reliability is exhibited. |
| 公开日期 | 1985-07-15 |
| 申请日期 | 1983-12-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75972]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KAJIMURA TAKASHI,ONO YUUICHI,KAYANE NAOKI,et al. Semiconductor laser device. JP1985132381A. 1985-07-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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