Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | TANAHASHI TOSHIYUKI; NAKAJIMA KAZUO; AKITA KENZOU |
| 发表日期 | 1984-10-04 |
| 专利号 | JP1984175781A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To reduce the reactive current by laminating an A InAs layer and an InP layer being capable of lattice matching, on an InP substrate and arranging a semiconductor clad layer, a semiconductor active layer and a semiconductor clad layer in a stripe-form groove penetrating through the laminating structure. CONSTITUTION:On an N type InP substrate 11 in which (100) plane is a main plane, an N type InP layer 12, a non-doped AlInAs layer 13 and a P type InP layer 14 are epitaxially grown in the above order. Subsequently, a groove 17 is formed in a direction of of the crystal by photolithography and a chemical etching method by using an SiO2 film as a mask. The groove 17 is a V- shaped groove exposing (111)B plane. In the groove 17, an N type InP clad layer 18, an N type InGaAsP active layer 19, a P type InP clad layer 20 and a P type InGaAsP cap layer 21 are epitaxially grown in the above order. At this time, an N type InP layer 18' and an N type InGaAsP layer 19' are grown on the layer 14 outside the groove 17. Next, a protective insulating film 22 and electrodes 23, 24 are formed. Thus, the reactive current can be reduced. |
| 公开日期 | 1984-10-04 |
| 申请日期 | 1983-03-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75976]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | TANAHASHI TOSHIYUKI,NAKAJIMA KAZUO,AKITA KENZOU. Manufacture of semiconductor light emitting device. JP1984175781A. 1984-10-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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