Semiconductor laser
文献类型：专利
| 作者 | TAKAHEI KENICHIROU; NAGAI HARUO; NOGUCHI ETSUO; NAKANO YOSHINORI; NAWATA KIYOSHI |
| 发表日期 | 1982-12-17 |
| 专利号 | JP1982206082A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce the leakage current remarkably improving the differential quantam efficiency by a method wherein the P-N junction in the embedded layer is located lower than the active layer which is embedded in the P type InP embedded layer with high resistance ratio. CONSTITUTION:A P-N junction 9 in the embedded layer is located lower than the active layer 3 which is embedded in the P type InP layer 6 with high resistance ratio. When the current is impressed between the electrodes 7 and 8, the luminous current flows from P type InP clad layer 2 to the active layer 3, N type InP clad layer 4 along the channel 10 while the leakage current flows into clad layer 4 through clad layer 2 and P type InP embedded layer 6 with high resistance ratio along the channel 12 due to the inverse voltage impressed on P-N juction 9 for limitting current channel. Consequently the leakage current is remarkably reduced increasing the luminous current flowing into the channel 10. |
| 公开日期 | 1982-12-17 |
| 申请日期 | 1981-06-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/75990]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | TAKAHEI KENICHIROU,NAGAI HARUO,NOGUCHI ETSUO,et al. Semiconductor laser. JP1982206082A. 1982-12-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。