Semiconductor light emitting device
文献类型：专利
| 作者 | HOSOBA, HIROYUKI; NAKATSU, HIROSHI; KURAHASHI, TAKAHISA; MURAKAMI, TETSUROH; SASAKI, KAZUAKI; NAKAMURA, JUNICHI |
| 发表日期 | 2002-10-15 |
| 专利号 | US6465812 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | A semiconductor light emitting device of the present invention at least includes: a GaAs substrate whose principal plane is inclined from a (100) plane in a [011] orientation; a first buffer layer of AlxGa1-xAs (0<=x<=1) provided on the principal plane of the GaAs substrate; a second buffer layer of AlyGaxIn1-y-zP (0<=y<=1 and 0<=z<=1) provided on the first buffer layer; a first cladding layer of AlaGatIn1-a-tP (0<=s<=1 and 0<=t<=1) provided on the second buffer layer; an active layer provided on the first cladding layer; and a second cladding layer provided on the active layer, wherein an Al content s of the first cladding layer is larger than an Al content y of the second buffer layer. |
| 公开日期 | 2002-10-15 |
| 申请日期 | 2000-09-27 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76003]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | HOSOBA, HIROYUKI,NAKATSU, HIROSHI,KURAHASHI, TAKAHISA,et al. Semiconductor light emitting device. US6465812. 2002-10-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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