Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | KADOWAKI TOMOKO |
| 发表日期 | 1989-07-27 |
| 专利号 | JP1989187988A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To prevent the generation of strain resulting from the difference of thermal expansion coefficients of crystal materials on a growth interface near an active region by composing all of a first clad layer, a current block layer and a second clad layer of AlGaInP crystals. CONSTITUTION:A semiconductor laser is constituted of a first conductivity type (AlyGa1-y)xIn1-xP first clad layer 2 formed onto a first conductivity type compound semiconductor substrate 1, a second conductivity type (AlzGa1-z)xIn1-xP current block layer 3 being shaped onto the first clad layer 2 and having a striped trench 10 having an inverted trapezoid cross section, a first conductivity type (AlalphaGa1-alpha)xIn1-xP second clad layer 4 formed onto the current block layer 3 and said striped trench 10, an (AlbetaGa1-beta)xIn1-xP active layer 5 and a second conductivity type (AlgammaGa1-gamma)xIn1-xP third clad layer 6. Accordingly, the generation of strain resulting from the difference of the thermal expansion coefficients of crystal materials and the induction of the formation of a crystal defect near the active region can be prevented. |
| 公开日期 | 1989-07-27 |
| 申请日期 | 1988-01-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76018]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KADOWAKI TOMOKO. Semiconductor laser and manufacture thereof. JP1989187988A. 1989-07-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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