Semiconductor laser device
文献类型：专利
| 作者 | ISSHIKI KUNIHIKO |
| 发表日期 | 1991-10-09 |
| 专利号 | JP1991228387A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To maintain a single-humped beam up to a high output and to obtain high reliability by providing no active stripe region due to Zn diffusion, etc., near a reflecting surface, and increasing the inhibited band width of a non- diffused region near the reflecting surface larger than a diffused region. CONSTITUTION:A light is guided via a waveguide formed of a refractive index difference in the lateral direction due to Zn diffusion and a refractive index difference between upper, lower clad layers 4, 2 and an active layer 3 in a resonator to form an array laser. On the other hand, the light is guided verti cally by a refractive index difference between the layers 4, 2 and the layer 3 in the vicinity of an edge in which no Zn is diffused, i.e., a non-diffused n-type window region 9, a guiding mechanism is not provided horizontally, and a diffraction coupling is formed. Further, the inhibited band width of the region 9 is increased larger than a p-type stripe region 8 in which Zn is diffused due to an acceptor order caused by Zn diffusion so that a laser light is not absorbed by the region 9. |
| 公开日期 | 1991-10-09 |
| 申请日期 | 1990-02-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76036]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ISSHIKI KUNIHIKO. Semiconductor laser device. JP1991228387A. 1991-10-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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