Semiconductor light emitting element
文献类型：专利
| 作者 | HAYASHI HIDEKI |
| 发表日期 | 1987-03-10 |
| 专利号 | JP1987054489A |
| 著作权人 | SUMITOMO ELECTRIC IND LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | PURPOSE:To realize the stable oscillation of low threshold current even in the case of high speed operation, by constituting an active layer by the semiconductor layer of a quantum well structure. CONSTITUTION:On an S-doped InP substrate 1, a buffer layer 2 of Sn-doped N-type AlInAs and an active layer 30 of a multi-quantum well structure, in which a well layer 3 of GaInAs and a barrier layer 4 of AlInAs are alternately grown, are formed. Next, a clad layer 5 composed of a P-type AlInAs and contact layer 6 composed of a P-type GaInAs are grown. The clad layer 5 is exposed by selective etching of a contact layer 6. On the exposed surface, a diffraction lattice is formed by etching, and ohmic electrodes 7 and 8 are formed on the back surface of the InP substrate 1 and on a contact layer 6, respectively. Stability of oscillation mode in the case of high speed modulation is obtained, thereby. |
| 公开日期 | 1987-03-10 |
| 申请日期 | 1986-05-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76038]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC IND LTD |
| 推荐引用方式 GB/T 7714 | HAYASHI HIDEKI. Semiconductor light emitting element. JP1987054489A. 1987-03-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。