Semiconductor laser device and a method of producing same
文献类型：专利
| 作者 | OMURA, ETSUJI |
| 发表日期 | 1990-06-26 |
| 专利号 | US4937835 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and a method of producing same |
| 英文摘要 | A seminconductor laser device includes a hetero-junction structure disposed in a groove in a semi-insulating semiconductor substrate having a first conductivity type first cladding layer, a quantum well active layer, and a first or second conductivity type or high resistance second cladding layer. First and second conductivity type impurity regions are selectively produced at opposite sides of an active region of the active layer and at adjacent portions of the substrate, penetrating at least the active layer. The regions of the active layer in the impurity regions are disordered. Electrodes are disposed on the substrate at the respective impurity regions. |
| 公开日期 | 1990-06-26 |
| 申请日期 | 1989-06-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76040]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | OMURA, ETSUJI. Semiconductor laser device and a method of producing same. US4937835. 1990-06-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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