Semiconductor laser device
文献类型：专利
| 作者 | NAMISAKI HIROBUMI; TADA KUNIO; NAKANO YOSHIAKI; ATOKAWA AKIHISA |
| 发表日期 | 1985-01-12 |
| 专利号 | JP1985005588A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce the temperature dependency of an oscillating wavelength by providing a reflector oppositely to one emitting end face of a semiconductor crystal which contains a laser active region, inserting a substance which decreases its refractive index as the temperature rises between the crystal and the reflector, and mounting the reflector to shorten the interval between the crystal and the reflector as the temperature rises. CONSTITUTION:A dielectric multilayer 5 is coated to prevent reflection on one emitting end face of a laser crystal 1, an opticalwaveguide 10 of a dielectric is provided behind it, and a reflecting mirror 20 is provided at the end of the opposite side to the end coupled to the crystal 1 of the opticalwaveguide 10. In this structure, laser oscillating wavelength satisfies the relationship of nDLD+ nRLR=mlambda/2. However, the nD, nR respectively represent the effective refractive indexes in laser crystal and opticalwaveguide, and the LR is the length of the opticalwaveguide. Accordingly, the value of the temperature dependency of the oscillating length becomes 0 when the laser crystal is GaAs, the opticalwaveguide is polystyrene, the lengths are 300mum, 52mm., and even if the temperature is varied, a laser which does not vary in the oscillating length can be obtained. |
| 公开日期 | 1985-01-12 |
| 申请日期 | 1983-06-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76066]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | NAMISAKI HIROBUMI,TADA KUNIO,NAKANO YOSHIAKI,et al. Semiconductor laser device. JP1985005588A. 1985-01-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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