Manufacture of semiconductor laser
文献类型：专利
| 作者 | SAKAKIBARA YASUSHI |
| 发表日期 | 1990-09-19 |
| 专利号 | JP1990237088A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To control the active region of a semiconductor laser in width easily and reproducibly so as to improve it in performance by a method wherein a stripe mask narrow in width is formed as a self-aligning marker for the implantation of ions, an ion implantation mask is formed basing on the marker, and ions are implanted using the mask. CONSTITUTION:A high resistive first clad layer 2, an active layer 3 of MQW structure, and a high resistive second clad layer 4 are successively formed on a semi-insulating semiconductor substrate 1, and then a stripe mask 5 with a width of 2-3mum is formed to serve as a marker which indicates an active region. Next, a mask 6, formed of such a material which can be removed leaving the stripe mask 5 when it is removed, is formed on one side of a chip, and first conductivity type impurity ions are implanted using the masks 5 and 6 to form a first conductivity type region 7 inside a crystal. Then, the mask 6 is removed, then a mask 8 is formed on the opposite side of the chip, and a second conductivity type region 7 is formed in the crystal using the masks 5 and 8. The first and the second conductivity type region, 7 and 9, formed as above are positioned basing on the stripe mask 5 which serves as a self-aligning marker, so that the width of an active region can be easily and reproducibly controlled. |
| 公开日期 | 1990-09-19 |
| 申请日期 | 1989-03-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76072]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | SAKAKIBARA YASUSHI. Manufacture of semiconductor laser. JP1990237088A. 1990-09-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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