Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | ASATA SUSUMU |
| 发表日期 | 1992-02-05 |
| 专利号 | JP1992034987A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To facilitate an injection of a current, to make it possible to make low an oscillation threshold current value and to manufacture a semiconductor laser, which is suitable as a parallel integrated light source for optical information processing use, by a method wherein a laser main body part, which is provided with a first conductivity type clad layer, an active layer and a second conductivity type clad layer, an electrode part and an electrode mounting pattern part are provided on an semi- insulating semiconductor substrate and the pattern part is provided with a vacancy for isolating the second conductivity type clad layer from the first semiconductivity type clad layer by the side of the active layer. CONSTITUTION:A second conductivity type clad layer 13 on an active layer 12 is pushed out in the horizontal direction and an electrode mounting pattern part 15 having a pore 14 is provided by the side of the layer 12, whereby problems, such as the difficulty of the formation of electrodes, an increase in a contact resistance to the electrodes and the like, can be improved. Moreover, as the sectional area of a current path can effectively be made large, the resistance of the parts of the clad layers can also be reduced. Moreover, as a current is made to flow in parallel to a film, the problem of the discontinuity of a heteroband can also be avoided. |
| 公开日期 | 1992-02-05 |
| 申请日期 | 1990-05-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76079]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | ASATA SUSUMU. Semiconductor laser and manufacture thereof. JP1992034987A. 1992-02-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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