Semiconductor laser device
文献类型：专利
| 作者 | YAMAGUCHI, MASAYUKI; MITO, IKUO; KITAMURA, MITSUHIRO |
| 发表日期 | 1988-06-14 |
| 专利号 | US4751710 |
| 著作权人 | NEC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A tunable semiconductor laser device includes a laser region and a tuning region, with a highly reflective surface formed on the cleaved vertical end facet of the tuning region for providing a reflectivity of 50% or more. The laser and tuning regions are formed on a common semiconductor substrate with the laser region having an active layer formed over the substrate, an optical waveguide layer adjacent the active layer and an electrode for carrying a drive current to the active region. The tuning region, adjacent the laser region on the substrate includes an optical waveguide which extends from the optical waveguide of the laser region, and a tuning current carrying electrode for injecting a tuning current across the waveguide layer of the tuning region. The tuning current alters the refractive index of the waveguide layer interface which changes the phase of the tuning region. Changing the tuning current varies the laser wavelength. The highly reflective end facet assures continuous wavelength tuning. The laser device may be incorporated into an integrated optical local oscillator comprising the laser device, a photodiode, a branched optical waveguide including an input port for mixing the output of the laser device and the light from the input port before being received by the photodiode. |
| 公开日期 | 1988-06-14 |
| 申请日期 | 1985-07-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76091]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | YAMAGUCHI, MASAYUKI,MITO, IKUO,KITAMURA, MITSUHIRO. Semiconductor laser device. US4751710. 1988-06-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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