Structure of semiconductor laser
文献类型：专利
| 作者 | TAKAMIYA SABURO; TANAKA TOSHIO; KUME ICHIRO |
| 发表日期 | 1987-06-23 |
| 专利号 | JP1987139376A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Structure of semiconductor laser |
| 英文摘要 | PURPOSE:To attain a high output while keeping a basic lateral mode by making a refractive index of a first layer larger than that of a second layer by forming a groove in an epitaxial wafer on which a number of epitaxial growth layers are formed in a manner its bottom reaches the first layer among current blocks which is in contact with a substrate. CONSTITUTION:On a P-type GaAs substrate 17, a P-type AlyGa1-yAs layer (first layer) 16, an N-type AlzGa1-zAS layer (second layer) 25, an N-type GaAs layer (third layer) 15 are epitaxially grown, respectively. Further on the third layer 15, a P-type AlxGa1-xAs layer 14, an N-type AlxsiGa1-xsiAs layer 13, an N-type AletaGa1-eta layer 12 and an N-type GaAs layer 11 are epitaxially grown. The third layer 15 on the substrate 17 functions as a current block and a light absorbing layer of an epitaxial wafer 18 and the second layer 25 functions as a current block and a second waveguide. A depth of a groove 19 in the wafer 18 is formed in a manner it reaches a first layer 16 on the substrate 17 and a refractive index of the first layer 16 is made larger than that of the second layer 25, thereby providing the high output of a semiconductor laser. |
| 公开日期 | 1987-06-23 |
| 申请日期 | 1985-12-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76107]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TAKAMIYA SABURO,TANAKA TOSHIO,KUME ICHIRO. Structure of semiconductor laser. JP1987139376A. 1987-06-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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