Semiconductor laser device
文献类型：专利
| 作者 | KONO TOSHIHIRO; TSUJI SHINJI; HANEDA MAKOTO; ONO YUICHI; AIKI KUNIO |
| 发表日期 | 1991-05-02 |
| 专利号 | JP1991105991A |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To arrange that an electrode does not become an obstacle when other elements are laminated and integrated and to realize an integration easily by a structure wherein a p-side electrode and an n-side electrode are formed on the same plane and a laser beam is applied from the side of a semiconductor substrate. CONSTITUTION:A p-AlXGa1-XAs substrate 2 which acts as a passage of an electric current between a p-side region and an n-side region is grown on an AlXGa1-XAs substrate 1; in addition, a p-AlGaAs multilayer-film reflection layer 3, a clad layer 4, a multiple quantum well active layer 5, an n-AlXGa1-XAs layer 6, an n-AlGaAs multilayer-film reflection layer 7 and a contact layer 8 are laminated one after another. Zn is diffused 9 to this wafer; the p-type region and the n-type region are isolated by forming an isolation groove 10 which reaches the p-AlGaAs multilayer-film reflection layer 3 or the p-AlGaAs layer 2. The side of the AlGaAs substrate 1 is polished and chemically etched so as to be convenient to form an element; a wafer layer is set to about 100mum. After that, a p-electrode 11 and an n-electrode 12 are formed to form the element. |
| 公开日期 | 1991-05-02 |
| 申请日期 | 1989-09-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76109]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | KONO TOSHIHIRO,TSUJI SHINJI,HANEDA MAKOTO,et al. Semiconductor laser device. JP1991105991A. 1991-05-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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