Semiconductor laser
文献类型：专利
| 作者 | SHIMADA KATSUTO |
| 发表日期 | 1989-05-12 |
| 专利号 | JP1989120884A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To form a semiconductor laser in which only the thickness of a part to be etched is controlled and a lateral mode is preferably controlled with good reproducibility by employing a laminated layer structure of a first semiconductor layer made of a superlattice structure having high etching selectivity and a second semiconductor layer. CONSTITUTION:A P-type photoconductive layer having a superlattice structure made of 27 periods of an undoped Al0.25Ga0.75As active layer 104 as a first semiconductor layer, an Al0.4Ga0.6As barrier layer 105 and an Al0.2Ga0.8As well layer is formed. Further, a P-type Al0.5Ga0.5As clad layer 106 as a second semiconductor layer, a P-type GaAs contact layer 107, and an undoped ZnSe layer 108 as a third semiconductor layer are formed. The layer 108 in such a structure performs as a role of a current constriction and also as a light confinement role. That is, a current flows to a central stripe thereby to reduce a threshold value current, thereby enclosing a light laser-oscillated in the stripe of the layer 104 in the stripe, and stabilizing a lateral mode by a refractive index guiding mechanism. |
| 公开日期 | 1989-05-12 |
| 申请日期 | 1987-11-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76132]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | SHIMADA KATSUTO. Semiconductor laser. JP1989120884A. 1989-05-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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