Optical integrated circuit device
文献类型：专利
| 作者 | MISHIMA TOMOYOSHI; MORIOKA MAKOTO; MURAYAMA YOSHIMASA; SHIRAKI YASUHIRO |
| 发表日期 | 1986-11-05 |
| 专利号 | JP1986248487A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical integrated circuit device |
| 英文摘要 | PURPOSE:To reduce interference between a laser element and a driving element and realize stable driving characteristics by a method wherein a semiconductor layer, whose forbidden band width is smaller than that of an activation layer of the laser element, is provided between the two elements so as to absorb a light. CONSTITUTION:An N-type Al0.4Ga0.6As layer 2, a P-type GaAs layer 3, an N-type Al0.4Ga0.6As layer 4, an N-type GaAs layer 5, an N-type Al0.4Ga0.6As layer 6, an I-type Al0.15Ga0.85As layer 7 and a P-type Al0.4Ga0.6As layer 8 are successively made to grow on an N type GaAs substrate 1 by a molecular beam epitaxial growth method. After that, utilizing a CVD-SiO2 stripe formed by photolithography as a mask, the laser part only is processed into a stripe shape by an ion milling method. Further, a P-type Al0.4Ga0.6As layer 9 and an N-type Al0.4Ga0.6As layer 10 are made to grow by a liquid phase epitaxial growth method to form a current constriction layer. After that, the semiconductor laser part is processed by mesa-etching and an AuGe electrode 11 and AgZn electrodes 12 and 13 are formed. |
| 公开日期 | 1986-11-05 |
| 申请日期 | 1985-04-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76136]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | MISHIMA TOMOYOSHI,MORIOKA MAKOTO,MURAYAMA YOSHIMASA,et al. Optical integrated circuit device. JP1986248487A. 1986-11-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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