半導体レーザ
文献类型：专利
| 作者 | 深谷 一夫 |
| 发表日期 | 1997-08-22 |
| 专利号 | JP2687694B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ |
| 英文摘要 | PURPOSE:To obtain a laser long in operating life where a through-dislocation functioning as a source of dislocation or a movement of dislocation induced from the crystal defect of a buried interface is held down by a method wherein the quantum well layer and the optical guide layer of a quantum well active layer are made to contain In. CONSTITUTION:A multilayer laminated structure provided with a double hetero-structure composed of a first conductivity type clad layer 2, a quantum well active layer 3, and a second conductivity type clad layer 4 is provided onto a substrate 1, the quantum well active layer 3 is composed of multi-quantum well layers 12 and 14 and optical guide layers 11 and 15 larger than the layers 12 and 14 in aluminum component, and the quantum well layers 12 and 14 and the optical guide layers 11 and 15 are made to contain In. Or, on. optical guide layers 21 and 27 contain In. A part of the second conductivity type clad layer 4 is removed so deep as to reach to the active layer, a part where the clad layer 4 has been removed is filled with a first conductivity type current block layer b, and an In containing layer is inserted in the second conductivity type clad layer 4 between the active layer and the current block layer. Or, the removed part is successively filled with an In containing layer and the conductivity type current block layer b. |
| 公开日期 | 1997-12-08 |
| 申请日期 | 1990-07-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76170]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 深谷 一夫. 半導体レーザ. JP2687694B2. 1997-08-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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