Semiconductor light emitting devices
文献类型：专利
| 作者 | KASUKAWA AKIHIKO; IWASE MASAYUKI |
| 发表日期 | 1988-09-08 |
| 专利号 | JP1988216396A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting devices |
| 英文摘要 | PURPOSE:To facilitate obtaining a highly reliable laser by removing the effect of the damage of a reflecting surface by providing a non-exciting region, etc. inside the reflecting surface in light emitting devices formed by facing the reflecting surfaces each other by etching. CONSTITUTION:Inside the edge faces 6, 7 of a resonator formed by facing each other by etching in semiconductor light emitting devices, a window region which is made transparent against non-exciting regions 9, 9' or the wavelength of the oscillation of a laser is provided. For example, after an n-type InP clad layer 2, an InGaAsP active layer 3, a p-type InP clad layer 4 and a p-type GaInAsP cap layer 4' are formed on an n-type InP substrate 1, reflecting surfaces 6, 7 are formed by dry etching by using a TiO2 film as a mask material 5. Then, after the exposed active layer 3 is slightly removed by shaving by selective etching, In and P are carried in the groove of the active layer from the clad layers 2, 4 of the both sides of the active layer 3 by heating to 600 deg.C in the atmosphere of PH3 and the non-exciting regions 9, 9' are provided by forming InP single crystal. |
| 公开日期 | 1988-09-08 |
| 申请日期 | 1987-03-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76172]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | KASUKAWA AKIHIKO,IWASE MASAYUKI. Semiconductor light emitting devices. JP1988216396A. 1988-09-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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