Semiconductor laser device
文献类型：专利
| 作者 | SAGARA MINORU; KURIHARA HARUKI; TAMURA HIDEO; MATSUMOTO KENJI |
| 发表日期 | 1984-11-13 |
| 专利号 | JP1984200482A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain the semiconductor laser device having the predetermined characteristics with good reproducibility by arranging a groove-deformation preventing layer consisting of GaAlAs in adjacency of the surface of the GaAs substrate provided with an U-groove of striped form to restrain deformation of the groove. CONSTITUTION:A groove-deformation preventing layer 26 of 0.1mun consisting of Ga0.6Al0.4As and a GaAs layer 28 of 0.1mun thick are successively formed on an N type GaAs substrate 24 followed by usual photoresist process and etching process to form a groove 30, for example, whose width (v) is 4+ or -0.2mun and depth is 1mun. GaAlAs in which molar concentration of AlAs is 0.1 or over is hardly deformed at liquid phase epitaxial growth, but, the surface is apt to be oxidized so that if the surface is exposed to the air once, good epitaxial growth can not be obtained. Then, the GaAs layer 28 is added to the groove-deformation preventing layer 26 successively to enable the good epitaxial growth. when the thickness of the groove-deformation preventing layer 26 becomes over 0.2mun, the exposed area of the surface of GaAlAs of the side walls of the groove to be exposed and oxidized becomes too large to achieve the good epitaxial growth. |
| 公开日期 | 1984-11-13 |
| 申请日期 | 1983-04-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76178]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | SAGARA MINORU,KURIHARA HARUKI,TAMURA HIDEO,et al. Semiconductor laser device. JP1984200482A. 1984-11-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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