Semiconductor laser element
文献类型：专利
| 作者 | HAYAKAWA TOSHIROU; TAKAGI TOSHIKIMI; OOTSUKA NAOTAKA |
| 发表日期 | 1982-12-17 |
| 专利号 | JP1982206083A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To elongate the life of laser elements by a method wherein the buffer layer on In1-GaxAs1-zPz with the forbidden band width narrower than that of the clad layer and wider than that of the active layer is provided between the clad layer and the active layer on the substrate side. CONSTITUTION:A double hetero constitution comprising the substrate of GaAs or Ga1-xAlxAs, active layer 11 In1-xGaxAs1-zPz, clad layer 3 of Ga1-xAlAs is formed. At this time, the buffer layer 10 comprising In1-xGax-zPz with the forbidden band width narrower than that of the layer 3 and wider than that of the layer 11 is provided. The layer 10 fills the role of the light guide layer but the carrier resulting from the inductive discharge is reconnected in the layer 1 Consequently the deterioration of the elements due to the laser operation may be extremely reduced by the improvement of the crystalizing property of the interface in the layer 1 |
| 公开日期 | 1982-12-17 |
| 申请日期 | 1981-06-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76184]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | HAYAKAWA TOSHIROU,TAKAGI TOSHIKIMI,OOTSUKA NAOTAKA. Semiconductor laser element. JP1982206083A. 1982-12-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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