Semiconductor laser device and fabrication method thereof
文献类型：专利
| 作者 | UCHIDA, SHIRO; TOJO, TSUYOSHI |
| 发表日期 | 2005-10-11 |
| 专利号 | US6954477 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and fabrication method thereof |
| 英文摘要 | A method of fabricating a ridge-waveguide type semiconductor laser device having a large half-value width and a high kink level is provided. First, an effective refractive index difference Δn between an effective refractive index neff1 of the ridge and an effective refractive index neff2 of a portion on each of both sides of the ridge is taken as Δn=neff1−neff2, and a ridge width is taken as W. On such an assumption, constants “a”, “b”, “c”, and “d” of the following three equations are set on X-Y coordinates (X-axis: W, Y-axis: Δn) The first equation is expressed by Δn≦a×W+b, where “a” and “b” are constants determining a kink level. The second equation is expressed by W≧c, where “c” is a constant specifying a minimum ridge width at the time of formation of the ridge. The third equation is expressed by Δn≧d, where “d” is a constant specified by a desired half-width value θpara. Then at least either of a kind and a thickness of an insulating film, a thickness of an electrode film on the insulating film, and a kind and a thickness of a portion, located on each of both the sides of the ridge, of the upper cladding layer is set in such a manner that a combination of Δn and W satisfies the above three equations. |
| 公开日期 | 2005-10-11 |
| 申请日期 | 2004-04-09 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76200]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | UCHIDA, SHIRO,TOJO, TSUYOSHI. Semiconductor laser device and fabrication method thereof. US6954477. 2005-10-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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