Semiconductor laser element
文献类型：专利
| 作者 | NAGAI HARUO; NOGUCHI ETSUO; NAKANO YOSHINORI |
| 发表日期 | 1984-09-04 |
| 专利号 | JP1984155185A |
| 著作权人 | NIPPON TELEGRAPH & TELEPHONE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To execute fundamental lateral mode oscillation, and to operate a P type substrate buried laser with high efficiency and a high output by positioning an N type InP layer in a multilayer structue crystal at a section lower than the end section of an active layer in mesa structure. CONSTITUTION:An active layer 3 takes the so-called crescent shape in a section vertical to the direction that beams are wave-guided. An N type InP layer (an N type InP buried layer) 5 in a multilayer structure crystal constituting a buried layer, which is burned brought into contact with both sides of striped mesa structure formed by double hetero structure containing the active layer 3 and consists of InP or InGaAsP having a function which constricts currents and forms an optical waveguide, is positioned at a section lower than the end section of the active layer 3 in mesa structure. Accordingly, fundamental lateral mode oscillation is executed, and a P type substrate buried laser is operated with high efficiency and a high output, and the titled semiconductor laser element is extremely effective as a light source for optical communication. |
| 公开日期 | 1984-09-04 |
| 申请日期 | 1983-02-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76203]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH & TELEPHONE |
| 推荐引用方式 GB/T 7714 | NAGAI HARUO,NOGUCHI ETSUO,NAKANO YOSHINORI. Semiconductor laser element. JP1984155185A. 1984-09-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。