Visible semiconductor laser
文献类型：专利
| 作者 | FUJIMOTO AKIRA; WATANABE HIDEAKI; SHIMURA MIKIHIKO; AKASAKI ISAMU |
| 发表日期 | 1985-04-12 |
| 专利号 | JP1985063980A |
| 著作权人 | TATEISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Visible semiconductor laser |
| 英文摘要 | PURPOSE:To enable the titled device to have a thick grown layer between an active layer and a substrate by reduction of the winding of the active layer by a method wherein part of a clad layer is replaced by a buffer layer composed of InGaAsP of a small energy gap. CONSTITUTION:An In0.12Ga0.88As0.34P0.68 is grown on an N type GaAs0.61P0.39 substrate 21 by the liquid phase growing method as the buffer layer 29. Next, a Te-doped In0.26Ga0.74As0.05P0.95 as the N type clad layer 22, a non-doped In0.15 Ga0.85As0.30P0.70 as the active layer 23, and a Zn-doped In0.26Ga0.74As0.05p0.95 as the P type clad layer are successively liquid-grown, respectively. After adhesion of an SiO2 film 25 on the clad layer 24 by the high frequency sputtering method, a stripe 28 is formed by etching of the film 25 by the photolithography method. Electrodes 26 and 27 made of an Au series alloy are formed on the P- side and the N-side by the vaccum vapor deposition method, respectively. Then, the laser diode is completed through cleavage and dicing. |
| 公开日期 | 1985-04-12 |
| 申请日期 | 1983-09-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76204]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TATEISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | FUJIMOTO AKIRA,WATANABE HIDEAKI,SHIMURA MIKIHIKO,et al. Visible semiconductor laser. JP1985063980A. 1985-04-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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