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文献类型：专利
| 作者 | OKUDA HAJIME; KINOSHITA JUNICHI; HIRAYAMA JUZO; UEMATSU YUTAKA |
| 发表日期 | 1988-10-14 |
| 专利号 | JP1988051558B2 |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To form an active layer at a high temperature without extinguishing a diffraction grating and thus enable the reduction of threshold value and the oscillation of single lateral mode by a method wherein a hetero-junction including the active layer is formed in the second process of crystal growth after anoptical waveguide layer and a current blocking layer are formed in the first process of crystal growth, and thereafter a groove is formed by etching. CONSTITUTION:A diffraction grating 2 is formed on an N-InP substrate Next, an N-GaInAsP layer 3, a P-InP layer 4, and an N-GaInAsP layer 5 are successively epitaxially grown on the substrate Then, using a mask and H2SO4 series etchant, the layer 5 is selectively etched to form the groove. Using HCl series etchant, the layer 4 is selectively etched with the layer 5 as a mask. An N-InP layer 6, a GaInAsP layer 7 doped with phosphorus, a P-InP layer 8, and a P GaInAsP layer 9 are successively epitaxially grown by crystal growth. Thereafter, electrodes are attached, etc., and accordingly a DFB laser is completed. |
| 公开日期 | 1988-10-14 |
| 申请日期 | 1983-06-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76210]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | OKUDA HAJIME,KINOSHITA JUNICHI,HIRAYAMA JUZO,et al. -. JP1988051558B2. 1988-10-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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