Semiconductor laser element
文献类型：专利
| 作者 | IWAI NORIHIRO; IJICHI TETSURO; MATSUMOTO SHIGETO |
| 发表日期 | 1992-04-13 |
| 专利号 | JP1992111375A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To simplify a manufacturing process by a method wherein an electrode which is ohmic-joined to a contact layer and which is Schottky-joined to a clad layer is laminated on the clad layer and the contact layer. CONSTITUTION:An n-InGaP clad layer 2, an InGaAs/GaAs strain quantum well active layer 3, a p-InGaP clad layer 4 and a p-InGaAs contact layer 5 are laminated sequentially on an n-GaAs substrate 1 by an MOCVD method. An etching operation is executed down to a halfway part of the p-InGaP clad layer 4 by a photolithographic method or the like; a mesa is formed; after that, Ti/Pt/Au is vapor-deposited as a p-electrode 7 and Au-Ge-Ni/Au is vapor-deposited sequentially as an n-electrode 8. When an electric current flows to an element manufactured in this manner, a Schottky junction part 9 is formed between the p-InGaP clad layer 4 and the p-electrode 7, the electric current flows only between the p-electrode and the p-InGaAs contact layer 5 and the electric current is constricted. |
| 公开日期 | 1992-04-13 |
| 申请日期 | 1990-08-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76212]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | IWAI NORIHIRO,IJICHI TETSURO,MATSUMOTO SHIGETO. Semiconductor laser element. JP1992111375A. 1992-04-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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