半導体レーザ装置
文献类型：专利
| 作者 | 石川 正行; 新田 康一; 渡邊 実; 岡島 正季 |
| 发表日期 | 2000-12-01 |
| 专利号 | JP3135250B2 |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置 |
| 英文摘要 | PURPOSE:To make possible the improvement of the maximum usable light output by a method wherein the lattice constant of a quantum well region is made large compared to the lattice constant of a substrate. CONSTITUTION:An n-type GaAs buffer layer 12, an n-type InGaAlP clad layer 13, a quantum well structure active layer 14 and a p-type InGaAlP clad layer 15 are grown and formed on a substrate 11, one part of the layer 15 is etched to its middle, a ridge is formed at the layer 15, a p-type InGaP cap layer 16 is formed on this ridge and a p-type GaAs contact layer 17 is formed on the layers 16 and 15. The layer 14 is formed by laminating a quantum well layer 14a and a barrier layer 14b. The composition of the layer 14a is changed, the lattice mismatching degree of the layer 14a to the substrate 11 is increased by 0.6 to 2% and the thickness of the layer 14a is formed into a thickness of 50 to 100 Angstrom . |
| 公开日期 | 2001-02-13 |
| 申请日期 | 1990-08-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76214]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | 石川 正行,新田 康一,渡邊 実,等. 半導体レーザ装置. JP3135250B2. 2000-12-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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