Semiconductor optical integrated circuit
文献类型：专利
| 作者 | KIMURA SOICHI; OGURA MOTOTSUGU; SHIBATA ATSUSHI; MORI YOSHIHIRO |
| 发表日期 | 1987-05-18 |
| 专利号 | JP1987106687A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical integrated circuit |
| 英文摘要 | PURPOSE:To form a laser part and a transistor part simultaneously in a complete planar structure by a method wherein, after an emitter layer, a multilayer well structure base layer and a collector layer are formed by one crystal growth process, an impurity is selectively diffused into the base layer. CONSTITUTION:An N-type InP layer 2, a P-type multilayer well 3 and an N-type InP layer 4 are successively formed on a semi-insulating InP substrate 1 by crystal growth. Then Zn is selectively diffused to form P-type impurity diffused layers 5. A groove is formed between a laser part 26 and a transistor part 25 and filled with resin 6. With this process, the refractive index of the impurity layers 5 becomes smaller than the refractive index of the quantum well layer so that the quantum well layer which is to be the base layer of the laser part 26 can be a refractive index waveguide. As the laser part 26 and the driving part 25 can be formed simultaneously by one crystal growth process and one impurity diffusion process, the processes are simplified and, moreover, as a complete planar structure is employed, the problem of step differences can be avoided. |
| 公开日期 | 1987-05-18 |
| 申请日期 | 1985-11-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76221]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KIMURA SOICHI,OGURA MOTOTSUGU,SHIBATA ATSUSHI,et al. Semiconductor optical integrated circuit. JP1987106687A. 1987-05-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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