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文献类型：专利
| 作者 | SAKUMA ISAMU; NISHIDA KATSUHIKO |
| 发表日期 | 1986-08-20 |
| 专利号 | JP1986036719B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To readily provide basic longitudinal and lateral mode oscillations by a distributed feedback semiconductor laser by forming a recess groove at the center on the surface of a compound semiconductor substrate, forming a diffraction grating on the bottom surface thereof, and laminating and growing a photoguide and carrier enclosure layers and active layer controlled in forbidden band width and refractive index on the entire surface thereof. CONSTITUTION:A band-like recess groove 15 is perforated at the center on the surface of an n-type InP substrate 8, and a diffraction grating 16 becoming perpendicular with respect to the groove 15 is formed on the bottom surface thereof by an etching process. Then, flat n-type In0.88Ga0.12As0.26P0.74 photoguide layer 19 and p-type In0.77Ga0.23As0.51P0.49 active layer 10 are laminated and epitaxially grown in liquid phase on the surface thereof while burying the groove 15, and a rectifying junction 17 is produced therebetween. Further, a p-type InP carrier enclosure layer 11 is coated thereon, a p-type electrode 13 is coated through an SiO2 film 12 thereon, and an n-type electrode 14 is coated on the back surface of the substrate 8. Thus, forward bias is applied to the junction 17 to provide a high power oscillation. |
| 公开日期 | 1986-08-20 |
| 申请日期 | 1979-03-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76246]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | SAKUMA ISAMU,NISHIDA KATSUHIKO. -. JP1986036719B2. 1986-08-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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