Semiconductor laser element
文献类型：专利
| 作者 | SASAKI KAZUAKI; SUYAMA NAOHIRO; MORIMOTO TAIJI; KONDO MASAFUMI; KONDO MASAKI; YAMAMOTO SABURO |
| 发表日期 | 1990-07-11 |
| 专利号 | JP1990178984A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To maintain a self-excited oscillation in a wide output range and to reduce an astigmatic difference by specifying the thickness of a second clad layer in a region outside the near region of a current injection path, equivalent refractive index difference between the side and the outside of the near region of the current junction path, and the width of the current injection path. CONSTITUTION:The thickness of a second clad layer 6 in a region outside the near region of a current injection path 31 is 0.2-0.4mum, an equivalent refractive index difference between the inside and the outside of the near region of the current injection path 31 is 3X10-5X10, and the width W1 of the current injection path 31 at least in one end face near region is smaller than the width W2 of the current injection path 31 in a region except the end face near region. Thus, since the difference of equivalent refractive index between the region near the current injection path and the region except it is 3X10-5X10 to generate a self-excited oscillation and the widths W1, W2 of the current injection path satisfy W1 |
| 公开日期 | 1990-07-11 |
| 申请日期 | 1988-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76253]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | SASAKI KAZUAKI,SUYAMA NAOHIRO,MORIMOTO TAIJI,et al. Semiconductor laser element. JP1990178984A. 1990-07-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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