Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | SUDO HISAO |
| 发表日期 | 1986-08-07 |
| 专利号 | JP1986176183A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To contrive reduction of a threshold value current and improvement in an external differential quantum efficiency by forming a channel formed on both sides of a stripe region by etching through a mask film having openings whose side plane is formed as an inclined plane so as to prevent the leakage current flowing through a part except a light emitting region. CONSTITUTION:On the substrate to be processed which is composed of a semiconductor substrate 1 and the first clad layer 2, an active layer 3, and the second clad layer 4 laminated in order on said substrate 1, the first mask film 21 having stripe-form openings 22 corresponding to the light emitting part forming regions is formed and the first mask film 21 is fused to form the side plane of the opening 22 as an inclined plane. The second mask film 24 having the stripe-form pattern is formed in the light emitting part forming region and the plane of the substrate to be processed is etched over the first and second mask films 23 and 24 so far as the inside of the substrate 1 by the etching means comprising anisotropy and less selection property between the maskfilms 23 and 24 and the processed substrate and a groove 108 defining a light emitting part of the active layer 3 is formed. After that, block layers 6 and 7 are grown in the region except the light emitting region. |
| 公开日期 | 1986-08-07 |
| 申请日期 | 1985-01-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76264]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | SUDO HISAO. Manufacture of semiconductor light emitting device. JP1986176183A. 1986-08-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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