Semiconductor laser element
文献类型：专利
| 作者 | ONO YUICHI; KAYANE NAOKI; FUKUZAWA TADASHI; KONO TOSHIHIRO; NAKATSUKA SHINICHI |
| 发表日期 | 1987-02-17 |
| 专利号 | JP1987036888A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To perform low returning light noise by providing a waveguide region of a refractive index guide at both ends of a light emitting region, and providing a portion having the waveguide region for mainly guiding a gain at least part of the interior to generate an effect of mode filter, thereby resultantly preventing an astigmatism. CONSTITUTION:A recess 2 is formed by selective chemical etching on an N-type GaAs substrate Then, an N-type GaAlAs clad layer 3, an uncoped active layer 4, a P-type GaAlAs clad layer 5 and an N-type cap layer 6 are sequentially grown. Thereafter, a P type region 7 is formed by a selective Zn diffusing method to deposit an Mo-Au electrode 8 and an AuGeNi-Au electrode 9. Subsequently, it is cleaved to form a reflecting surface. A recess is also formed on the active layer above the recess 2 to produce a refractive index difference between the striped interior and the outer edge. Thus, since the laser light is enclosed in this manner, an astigmatism is small. Since no step is formed on the active layer, it becomes a normal narrow striped laser structure in multimode of laser oscillation, thereby generating no returning light noise. |
| 公开日期 | 1987-02-17 |
| 申请日期 | 1985-08-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76271]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | ONO YUICHI,KAYANE NAOKI,FUKUZAWA TADASHI,et al. Semiconductor laser element. JP1987036888A. 1987-02-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。