半導体レーザの製造方法
文献类型：专利
| 作者 | 岩野 英明 |
| 发表日期 | 1996-03-04 |
| 专利号 | JP1996021756B2 |
| 著作权人 | セイコーエプソン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザの製造方法 |
| 英文摘要 | PURPOSE:To prevent deterioration of the end surface of a resonator, by a constitution wherein the mixed-crystal composition ratio of a group III-V single-crystal thin film in a window region is different from the mixed-crystal composition ratio of an active layer, and ultraviolet rays are projected only to the window region during the growth of the single crystal thin film in a active region. CONSTITUTION:When an Al0.15Ga0.85As active layer 109 is formed, ultraviolet rays are projected to the vicinity of a cleavage plane. At this time the decomposition efficiencies of organic metal materials such as trimethylgallium (TMG) and trimethylaluminum (TMA), which are group IV materials used for an MOCVD method are different at light irradiated parts. Therefore, an Al0.2Ga0.8 As layer 110 including a large amount of aluminum is formed only in the vicinity of a cleavage plane. Therefore, the difference in band gaps Eg is sufficiently large, carriers are not implanted in a window region (a) and absorption of laser oscillating light in the vicinity of the end surface is negligible. Thus the life of at the time of continuous oscillation can be extended. |
| 公开日期 | 1996-03-04 |
| 申请日期 | 1986-10-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76274]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | セイコーエプソン株式会社 |
| 推荐引用方式 GB/T 7714 | 岩野 英明. 半導体レーザの製造方法. JP1996021756B2. 1996-03-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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