Semiconductor laser device
文献类型：专利
| 作者 | MURAKAMI TAKASHI; TANAKA TOSHIO; KAKIMOTO SHIYOUICHI; MIHASHI YUTAKA; TAKAMIYA SABUROU |
| 发表日期 | 1984-08-13 |
| 专利号 | JP1984141282A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a laser, characteristics thereof are excellent and reliability thereto is superior, by suppressing a surface morphology with a terraced stepped difference by inclining a main surface only by a specific angle while using a waveguide direction as an axis, growing a thin uniform active layer and preventing the displacement of the direction of emitting beams by controlling the direction of inclination. CONSTITUTION:A main surface is inclined at an angle of 0.2-5 deg. while using the waveguide direction as an axis. For example, a face orientation of a substrate consisting of GaAs is inclined at 1 deg. from a 100 face. Since a thin uniform active layer 13 can be acquired by inclining the substrate, currents injected to the active layer 13 are equalized, and beams emitted by injection currents do not scatter and are emitted uniformly. Since the substrate 11 is inclined in the direction that is turned while using emitting beams as an axis, the direction of emitting beams is the same as conventional type devices through the substrate 11 is inclined, and no trouble is generated even when a laser chip is mounted to a package. |
| 公开日期 | 1984-08-13 |
| 申请日期 | 1983-02-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76276]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | MURAKAMI TAKASHI,TANAKA TOSHIO,KAKIMOTO SHIYOUICHI,et al. Semiconductor laser device. JP1984141282A. 1984-08-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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