Liquid-phase epitaxial growth method
文献类型：专利
| 作者 | YOSHITOSHI KEIICHI; NISHIMURA TAKAYUKI; AOME YOSHIO |
| 发表日期 | 1985-10-08 |
| 专利号 | JP1985198719A |
| 著作权人 | SANYO DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid-phase epitaxial growth method |
| 英文摘要 | PURPOSE:To inhibit the generation of a crystal defect by bringing the speed of travel of a slider with a melt reservoir to 50mm./sec or more when a melt and a substrate are under a noncontacting state. CONSTITUTION:A plurality of melt reservoirs 2a-2d are formed to a first slider 1, and a second slider 3 to which a recessed section 4 for holding a substrate is shaped is mounted to the bottom section of the first slider The single crystal substrate 6 is housed in the recessed section 4, a melt having a desired composition is housed in the melt reservoirs 2a-2d, and each melt is kept for a fixed time at a fixed temperature. The first slider 1 is slid while several melt is cooled at predetermined speed, and each melt is brought into contact with the substrate 6. The speed of travel of the slider is brought to 50mm./sec or more. Accordingly, a convection is generated in the melts and the composition is equalized, and defects in a growth layer can be inhibited. |
| 公开日期 | 1985-10-08 |
| 申请日期 | 1984-03-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76278]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO DENKI KK |
| 推荐引用方式 GB/T 7714 | YOSHITOSHI KEIICHI,NISHIMURA TAKAYUKI,AOME YOSHIO. Liquid-phase epitaxial growth method. JP1985198719A. 1985-10-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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