Semiconductor laser
文献类型：专利
| 作者 | MATOBA AKIHIRO; IMANAKA KOUICHI; WATANABE AKIRA; SANO KAZUYA |
| 发表日期 | 1985-01-12 |
| 专利号 | JP1985005585A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable to perform high output with a thick active layer by asymmetrically forming the refractive indexes of two clad layers, between which an active layer is interposed, and increasing the leakage of a light from the active layer than symmetrical waveguides in the same active layer thickness. CONSTITUTION:An N type Ga1-xAlx-1As clad layer 12, a Ga1-yAlyAs active layer 13, a P type Ga1-x2Alx2As clad layer 14, and an N type GaAs cap layer 15 are sequentially grown on an N type GaAs layer substrate 1 The composition ratio of aluminum is set among the layers to x2>x1>y or x1>x2>y. When a forward voltage is applied, a current is concentrated to a diffused strip 16, and flowed, carried is enclosed in the layer 13 directly under it to form an inverted distribution. The light is enclosed in the layer 13, waveguided, amplified between mirrors formed by cleaving, and a laser oscillation is performed. At this time, since the refractive indexes of the layers 12, 13 are asymmetrical to the layer 13, the waveguided beam becomes the flared shape cut largely at the skirt at the clad layer having low refractive index to decrease the rate of waveguiding the layer 13, thereby increasing the output. |
| 公开日期 | 1985-01-12 |
| 申请日期 | 1983-06-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76284]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | MATOBA AKIHIRO,IMANAKA KOUICHI,WATANABE AKIRA,et al. Semiconductor laser. JP1985005585A. 1985-01-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。