Compound semiconductor device
文献类型：专利
| 作者 | SERIZAWA AKIMOTO; FUJITA TOSHIHIRO; MATSUDA KENICHI; OUYA JIYUN |
| 发表日期 | 1986-10-13 |
| 专利号 | JP1986229385A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Compound semiconductor device |
| 英文摘要 | PURPOSE:To cause modes in an active layer and light guiding layer to coincide more, by forming multi-layer epitaxial thin films from vapor phase state on a substrate having a step difference, in order to form the light guiding layer and active layer for generating light into a lamination. CONSTITUTION:On an InP single crystal substrate 20, a step difference 21 is formed by etching, on which N-type layers 22a, 22b are grown by MOCVD to attain the layers 22a, 22b having the step difference 21 intervened between them. Layers 23a, 23b (a forbidden band width of E1) consisting of an N- InGaAsP layer are grown thereon to attain the light guiding layer 23b having the step difference 21 intervened. Moreover, N-InP cladding layers 24a, 24b are grown thereon and layers 25a, 25b for attaining laser activation are grown to make the layer 25a a laser activating layer. Moreover, layers 26a, 26b for forming a cladding section are grown to form the laser cladding layer 26a (a forbidden band width of E2, E1>E2). On the layer 26a and the bottom face of the substrate, electrodes 27, 28 are formed. |
| 公开日期 | 1986-10-13 |
| 申请日期 | 1985-04-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76287]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | SERIZAWA AKIMOTO,FUJITA TOSHIHIRO,MATSUDA KENICHI,et al. Compound semiconductor device. JP1986229385A. 1986-10-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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