Semiconductor laser
文献类型：专利
| 作者 | TSUNEKAWA YOSHIFUMI |
| 发表日期 | 1990-03-07 |
| 专利号 | JP1990067777A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which has a high-output characteristic and a low-noise characteristic and which is oscillated stably in a single-ridged transverse mode by a method wherein an end-face part of a resonator is of a phased array structure and a part near the center of the resonator is of a structure having a mode filter function and a gain waveguide mechanism. CONSTITUTION:Side faces of a rib-shaped waveguide formed by etching a second clad layer to a halfway part to be an upper-face shape 109 of the rib-shaped waveguide are filled with ZnSe; a current constriction layer 108 composed of a high-resistance layer is formed. A rib-shaped light waveguide width and a current injection width are made nearly equal and are made narrow near a light-radiating end face; they form a refractive-index waveguide mechanism; they are arranged close to each other so as to be of a phased array structure; a high-output oscillation can be obtained. The rib-shaped light waveguide width is made wide, and a coherent length is made short near the central part; an interference property with respect to a returned beam is lowered; a low noise is realized. |
| 公开日期 | 1990-03-07 |
| 申请日期 | 1988-09-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76293]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | TSUNEKAWA YOSHIFUMI. Semiconductor laser. JP1990067777A. 1990-03-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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