Semiconductor light emitting device
文献类型：专利
| 作者 | MORI YOSHIHIRO; OGURA MOTOTSUGU; SHIBATA ATSUSHI |
| 发表日期 | 1987-08-19 |
| 专利号 | JP1987189750A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To obtain a construction adapted for improving a yield and reducing a cost and high speed operation of a semiconductor light emitting device by forming one or more semiconductor light emitting elements having larger band gaps of second and third semiconductor layers than a first semiconductor layer and one or more bipolar transistor or a field effect transistor on the same semiconductor substrate. CONSTITUTION:An N-type InPd layer 2, a P type multiplex quantum well layer 3, and an N-type InP layer 20 are sequentially epitaxially grown on a semi-insulating InP substrate The layer 3 is formed of a structure that weakly P-type doped InP and InGaAsP thin films are laminated. Thereafter, a Zn- diffused layer 5 is formed, an insulating layer 6 for separating between elements are formed, and electrodes of the layers are formed to complete the process. Thus, a collector layer of a laser transistor is 11, and the emitter layer of a hetero junction bipolar transistor is 4, and they are formed of N-type InP layers 20. The latter can reversely operate as a transistor but since it has a wide emitter structure, it can obtain a sufficient current amplification factor. |
| 公开日期 | 1987-08-19 |
| 申请日期 | 1986-02-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76307]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | MORI YOSHIHIRO,OGURA MOTOTSUGU,SHIBATA ATSUSHI. Semiconductor light emitting device. JP1987189750A. 1987-08-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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