Manufacture of semiconductor light-emitting element
文献类型：专利
| 作者 | OKAZAKI JIRO |
| 发表日期 | 1986-07-12 |
| 专利号 | JP1986154091A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To ensure the use for a prolonged term by forming an InGaAsP contact layer, on the surface of which In particles do not adhere. CONSTITUTION:A laminated semiconductor layer is grown through a liquid phase epitaxial growth method, and a P-type InGaAsP contact layer 7 is grown in thickness of approximately 0.5mum after the growth of a layer such as a P-type InP clad layer 6 in the same manner as conventional devices, but an InP cover layer 11 is grown in thickness of approximately 0.5mum successively without completing laminating growth at that time. Consequently, the generation of In particles 10 which have adhered on the contact layer 7 can be transferred onto the cover layer 11, and the interface on which there is no In particle 10 is shaped between the contact layer 7 and the cover layer 1 The surface of the cover layer 11 is washed by a mixed liquid in which HF and HNO3 are mixed at the rate of 1: In is easy to dissolve and InP is difficult to dissolve to the mixed liquid, thus selectively removing In particles adhering on the cover layer 1 The cover layer 11 is removed through etching, thus completing the formation of the contact layer 7. |
| 公开日期 | 1986-07-12 |
| 申请日期 | 1984-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76317]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | OKAZAKI JIRO. Manufacture of semiconductor light-emitting element. JP1986154091A. 1986-07-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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